Electrochemical growth of thin La2O3 films on oxide and metal surfaces

被引:45
作者
Stoychev, D
Valov, I
Stefanov, P
Atanasova, G
Stoycheva, M
Marinova, T [1 ]
机构
[1] Bulgarian Acad Sci, Inst Gen & Inorgan Chem, BU-1113 Sofia, Bulgaria
[2] Bulgarian Acad Sci, Inst Chem Phys, BU-1113 Sofia, Bulgaria
来源
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2003年 / 23卷 / 1-2期
关键词
La2O3; ZrO2; films; electrodeposition; XPS; SEM;
D O I
10.1016/S0928-4931(02)00261-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This work presents a new electrochemical method (i.e. new electrolyte composition and electrolysis regime) for direct formation of La2O3 on ZrO2 and other oxide and metal substrates from nonaqueous electrolytes, data on the kinetics of the electrochemical processes and scanning electron microscopy (SEM) and XPS studies of the morphology, structure, dispersion and chemical composition of La2O3, (C) 2002 Elsevier Science B.V. All fights reserved.
引用
收藏
页码:123 / 128
页数:6
相关论文
共 50 条
  • [1] Impurity and silicate formation dependence on O3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films
    Park, Tae Joo
    Byun, Young-Chul
    Wallace, Robert M.
    Kim, Jiyoung
    JOURNAL OF CHEMICAL PHYSICS, 2017, 146 (05)
  • [2] Growth and investigation of LaNiO3/La2O3 composites films for optoelectronic applications
    Jbeli, R.
    Mami, A.
    Bilel, C.
    Saadallah, F.
    Bouaicha, M.
    Amlouk, M.
    OPTIK, 2021, 247
  • [3] Amorphous to Polycrystalline Phase Transition in La2O3 Films Grown on a Silicon Substrate Forming Si-Doped La2O3 Films
    Lee, Seung Ran
    Kim, Ansoon
    Choi, Seungwook
    Ikeda, Tokihiro
    Kobayashi, Tomohiro
    Isoshima, Takashi
    Cho, Sungwan
    Kim, Yousoo
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2022, 219 (23):
  • [4] Structural changes of Y2O3 and La2O3 films by heat treatment
    Yamamoto, Takashi
    Izumi, Yukiko
    Hashimoto, Hideki
    Oosawa, Masanori
    Sugita, Yoshihiro
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (8A): : 6196 - 6202
  • [5] Reduction of Residual C and N-Related Impurities by Al2O3 Insertion in Atomic-Layer-Deposited La2O3 Thin Films
    Park, Tae Joo
    Sivasubramani, Prasanna
    Coss, Brian E.
    Lee, Bongki
    Wallace, Robert M.
    Kim, Jiyoung
    Rousseau, Mike
    Liu, Xinye
    Li, Huazhi
    Lehn, Jean-Sebastien
    Hong, Daewon
    Shenai, Deo
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (05) : G23 - G26
  • [6] Performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors
    Feng Qian
    Li Qian
    Xing Tao
    Wang Qiang
    Zhang Jin-Cheng
    Hao Yue
    CHINESE PHYSICS B, 2012, 21 (06)
  • [7] The growth and evolution of thin oxide films on δ-plutonium surfaces
    Flores, Harry G. Garcia
    Pugmire, David L.
    ACTINIDES 2009, 2010, 9
  • [8] Electrochemical growth and characterization of tin oxide thin films
    Reddy, V. Ashok
    Thanikaikarasan, S.
    Marjorie, S. Roji
    MATERIALS TODAY-PROCEEDINGS, 2020, 33 : 3417 - 3419
  • [9] Electrochemical growth and characterization of Cu2O thin films
    Kumar, J. Naveen
    Thanikaikarasan, S.
    Marjorie, S. Roji
    MATERIALS TODAY-PROCEEDINGS, 2020, 33 : 3402 - 3404
  • [10] Electrochemical growth and studies of CuInSe2 thin films
    Prasher, Dixit
    Chandel, Tarun
    Rajaram, Poolla
    MATERIALS RESEARCH EXPRESS, 2014, 1 (02):