Gate control of quantum dot-based electron spin-orbit qubits

被引:3
|
作者
Wu, Shudong [1 ]
Cheng, Liwen [1 ]
Yu, Huaguang [1 ]
Wang, Qiang [1 ]
机构
[1] Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金; 国家重点研发计划;
关键词
Spin-orbit qubit; Quantum dot; Electric-dipole spin resonance; Spin-orbit coupling; Electric field; Tilted magnetic field; ENTANGLEMENT;
D O I
10.1016/j.physleta.2018.05.005
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate theoretically the coherent spin dynamics of gate control of quantum dot-based electron spin-orbit qubits subjected to a tilted magnetic field under electric-dipole spin resonance (EDSR). Our results reveal that Rabi oscillation of qubit states can be manipulated electrically based on rapid gate control of SOC strength. The Rabi frequency is strongly dependent on the gate-induced electric field, the strength and orientation of the applied magnetic field. There are two major EDSR mechanisms. One arises from electric field-induced spin-orbit hybridization, and the other arises from magnetic field-induced energy-level crossing. The SOC introduced by the gate-induced electric field allows AC electric fields to drive coherent Rabi oscillations between spin-up and -down states. After the crossing of the energy-levels with the magnetic field, the spin-transfer crossing results in Rabi oscillation irrespective of whether or not the external electric field is present. The spin-orbit qubit is transferred into the orbit qubit. Rabi oscillation is anisotropic and periodic with respect to the tilted and in-plane orientation of the magnetic field originating from the interplay of the SOC, orbital, and Zeeman effects. The strong electrically-controlled SOC strength suggests the possibility for scalable applications of gate-controllable spin-orbit qubits. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:1922 / 1932
页数:11
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