Precise Positioning of Organic Semiconductor Single Crystals with Two-Component Aligned Structure through 3D Wettability-Induced Sequential Assembly

被引:18
作者
Deng, Wei [1 ]
Lu, Bei [1 ]
Mao, Jian [1 ]
Lu, Zhengjun [1 ]
Zhang, Xiujuan [1 ]
Jie, Jiansheng [1 ]
机构
[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
organic semiconductor; 3D wettability-induced sequential assembly; organic p-n heterojunction; two-component single crystal array; organic field-effect transistors; FIELD-EFFECT TRANSISTORS; CHARGE-TRANSPORT; N-CHANNEL; AMBIPOLAR; HETEROJUNCTION; SEPARATION; ALIGNMENT;
D O I
10.1021/acsami.9b10089
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Highly ordered organic semiconductor single-crystal (OSSC) arrays are ideal building blocks for functional organic devices. However, most of the current methods are only applicable to fabricate OSSC arrays of a single component, which significantly hinders the application of OSSC arrays in integrated organic circuits. Here, we present a universal approach, termed three-dimensional (3D) wettability-induced sequential assembly that can programmatically and progressively manipulate the crystallization locations of different organic semiconductors at the same spatial position using a 3D microchannel template, for the fabrication of the two-component OSSC arrays. As an example, we successfully prepared two-component, bilayer structured OSSC arrays consisting of n-type N,N'-bis(2-phenylethyl)perylene-3,4:9,10-tetracarboxylic diimide and p-type 6,13-bis(triisopropylsilylethynyl)pentacene microbelts. The bicomponent OSSCs show ambipolar carrier transport properties with hole and electron mobilities of 0.342 and 0.526 cm(2) V-1 s(-1), respectively. Construction of complementary inverters is further demonstrated based on the two-component OSSCs. The capability of integration of multicomponent OSSC arrays opens up unique opportunities for future high-performance organic complementary circuits.
引用
收藏
页码:36205 / 36212
页数:8
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