Effect of Hydrogen Plasma on Electroless-Plating Ni-B Films and Its Cu Diffusion Barrier Property

被引：6

作者：

Choi, Kyeong-Keun ^{[1
]}

Kee, Jong ^{[1
]}

Kwon, Da-Jung ^{[2
]}

Kim, Deok-Kee ^{[3
]}

机构：

[1] Pohang Univ Sci & Technol POSTECH, NINT, Pohang 790784, South Korea

[2] JIO Fine Chem Co Ltd, Dept Res & Dev, Gumi 730410, South Korea

[3] Sejong Univ, Dept Elect Engn, Seoul 143747, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2014年 / 14卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

Ni-B Film; Hydrogen Plasma Treatment; Diffusion Barrier; Copper; MIM; COPPER INTERCONNECTS; SCALE-INTEGRATION; THIN-FILMS; DEPOSITION; METALLIZATION; TECHNOLOGY; LAYER;

D O I：

10.1166/jnn.2014.10177

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Electroless-plating Ni-B films have been evaluated for the application as the diffusion barrier and metal cap for copper integration. The effect of post plasma treatment in a hydrogen environment on the characteristics of Ni-B films such as chemical composition, surface roughness, crystallinity, and resistivity was investigated. By treating electroless-plating Ni-B films with H-2 plasma, the resistance and the roughness of the films decreased. The leakage current of Ni-B bottom electrode/30-nm-thick Al2O3/Al top electrode structures improved after the H-2 plasma treatment on the Ni-B films. 40 nm-thick electroless-plating Ni-B film was able to block Cu diffusion up to 350 degrees C.

引用

页码：9599 / 9605

页数：7

共 21 条

[1]

Andricacos P., 1999, INTERFACE-J NEW MUS, V8, P32

[2] Damascene copper electroplating for chip interconnections [J].

Andricacos, PC ;

Uzoh, C ;

Dukovic, JO ;

Horkans, J ;

Deligianni, H .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1998, 42 (05) :567-574

[3]

Bonkohara M., 2005, ELECTRON COMM JPN 2, VJ87-C, P791

[4] Pre-annealing effect of electroless Ni-B deposit as a diffusion barrier for electroplated Cu electrodes [J].

Choi, JW ;

Hwang, GH ;

Han, WK ;

Kang, SG .

METALS AND MATERIALS INTERNATIONAL, 2006, 12 (01) :75-80

[5] Effect of hydrogen remote plasma annealing on the characteristics of copper film [J].

Choi, KK ;

Yun, JH ;

Rhee, SW .

THIN SOLID FILMS, 2003, 429 (1-2) :255-260

[6] Characterization and integration of new porous low-k dielectric (k<2.3) for 65 nm technology and beyond [J].

Choi, Kyeong-Keun ;

Cho, Ihl Hyun ;

Park, Sang Jong ;

Lim, Jung Eun ;

Jung, Oh Jin ;

Park, Jong Hyuk ;

Min, Byung Seung ;

Hwang, Sung Bo ;

Ko, Min Jin ;

Lee, Jeong Gun .

THIN SOLID FILMS, 2007, 515 (12) :5025-5030

[7] Selective and blanket electroless copper deposition for ultralarge scale integration [J].

Dubin, VM ;

ShachamDiamand, Y ;

Zhao, B ;

Vasudev, PK ;

Ting, CH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (03) :898-908

[8] Electroless Ni-B plating on SiO2 with 3-aminopropyl-triethoxysilane as a barrier layer against Cu diffusion for through-Si via interconnections in a 3-dimensional multi-chip package [J].

Ikeda, Akihiro ;

Sakamoto, Atsushi ;

Hattori, Reiji ;

Kuroki, Yukinori .

THIN SOLID FILMS, 2009, 517 (05) :1740-1745

[9] Characterization of electroless deposited Co(W,P) thin films for encapsulation of copper metallization [J].

Kohn, A ;

Eizenberg, M ;

Shacham-Diamand, Y ;

Sverdlov, Y .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2001, 302 (01) :18-25

[10] Reliability challenges for copper interconnects [J].

Li, BZ ;

Sullivan, TD ;

Lee, TC ;

Badami, D .

MICROELECTRONICS RELIABILITY, 2004, 44 (03) :365-380

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