Reliability-Aware SPICE Compatible Compact Modeling of IGZO Inverters on a Flexible Substrate

被引：7

作者：

Kim, Je-Hyuk ^{[1
]}

Seo, Youngjin ^{[1
]}

Jang, Jun Tae ^{[1
]}

Park, Shinyoung ^{[1
]}

Kang, Dongyeon ^{[1
]}

Park, Jaewon ^{[2
]}

Han, Moonsup ^{[3
]}

Kim, Changwook ^{[4
]}

Park, Dong-Wook ^{[2
]}

Kim, Dae Hwan ^{[1
,4
]}

机构：

[1] Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea

[2] Univ Seoul, Sch Elect & Comp Engn, Seoul 02504, South Korea

[3] Univ Seoul, Dept Phys, Seoul 02504, South Korea

[4] Kookmin Univ, Circadian ICT Res Ctr, Seoul 02707, South Korea

来源：

APPLIED SCIENCES-BASEL | 2021年 / 11卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

indium gallium zinc oxide; IGZO TFT; SPICE simulation; flexible device; inverter; compact modeling; reliability-aware simulation; PET substrate; THIN-FILM TRANSISTORS; OXIDE SEMICONDUCTORS; INGAZNO; GATE; FABRICATION; STRESS;

D O I：

10.3390/app11114838

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Accurate circuit simulation reflecting physical and electrical stress is of importance in indium gallium zinc oxide (IGZO)-based flexible electronics. In particular, appropriate modeling of threshold voltage (V-T) changes in different bias and bending conditions is required for reliability-aware simulation in both device and circuit levels. Here, we present SPICE compatible compact modeling of IGZO transistors and inverters having an atomic layer deposition (ALD) Al2O3 gate insulator on a polyethylene terephthalate (PET) substrate. Specifically, the modeling was performed to predict the behavior of the circuit using stretched exponential function (SEF) in a bending radius of 10 mm and operating voltages ranging between 4 and 8 V. The simulation results of the IGZO circuits matched well with the measured values in various operating conditions. It is expected that the proposed method can be applied to process improvement or circuit design by predicting the direct current (DC) and alternating current (AC) responses of flexible IGZO circuits.

引用

页数：10

共 30 条

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