Initial stages of InN thin film growth onto MgAl2O4(111) and α-Al2O3(00•1) substrates

被引：18

作者：

Tsuchiya, T ^{[1
]}

Ohnishi, M ^{[1
]}

Wakahara, A ^{[1
]}

Yoshida, A ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 220卷 / 03期

关键词：

InN; alpha-Al2O3(00 center dot 1); MgAl2O4(111); initial stage;

D O I：

10.1016/S0022-0248(00)00548-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The initial growth stage of InN on both alpha -Al2O4(0 0 . 1) and MgAl2O3(1 1 1) substrates has been investigated. Both the reflection high-energy electron diffraction (RHEED) and the atomic force microscope (AFM) measurements indicated that the growth of InN on alpha -Al2O3(0 0 . 1) was three-dimensional, but was two-dimensional on MgAl2O4(1 1 1). (C) 2000 Published by Elsevier Science B.V.

引用

页码：191 / 196

页数：6

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