Low thermal conductivity in Si/Ge hetero-twinned superlattices

被引：11
|
作者：
Dong, Huicong [1 ]
Wen, Bin [1 ]
Zhang, Yuwen [2 ]
Melnik, Roderick [3 ]
机构：
[1] Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China
[2] Univ Missouri Columbia, Dept Mech & Aerosp Engn, Columbia, MO 65211 USA
[3] Wilfrid Laurier Univ, MS2Discovery Interdisciplinary Res Inst, 75 Univ Ave, Waterloo, ON N2L 3C5, Canada
来源：
RSC ADVANCES | 2017年 / 7卷 / 48期
基金：
加拿大自然科学与工程研究理事会; 美国国家科学基金会; 中国国家自然科学基金;
关键词：
MOLECULAR-DYNAMICS; BOUNDARIES; MECHANISMS; TRANSPORT; SILICON; SIZE;
D O I：
10.1039/c7ra03833j
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The thermophysical properties of Si/Ge hetero-twinned superlattices (SLs) are investigated by nonequilibrium molecular dynamic simulations. The results indicate that the Si/Ge hetero-twinned SLs show low thermal conductivity, which is similar to that of conventional Si/Ge SLs. Analysis with phonon kinetic theory shows that low thermal conductivity in the Si/Ge hetero-twinned SLs is caused by the combined actions of reduced phonon group velocity and reduced relaxation time. Moreover, despite similar thermal conductivity in Si/Ge hetero-twinned SLs and conventional Si/Ge SLs, the phonon group velocity and relaxation time in the two structures are totally different. Our results demonstrate the potential of a new kind of SLs with strong phonon scattering.
引用
收藏
页码：29959 / 29965
页数：7
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