Coupling atomistic and finite element approaches for the simulation of optoelectronic devices

被引:6
作者
der Maur, M. Auf [1 ]
Sacconi, F. [1 ]
Penazzi, G. [1 ]
Povolotskyi, M. [2 ]
Romano, G. [1 ]
Pecchia, A. [1 ]
Di Carlo, A. [1 ]
机构
[1] Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy
[2] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
关键词
Multiscale; Atomistic; Tight binding; Drift-diffusion; Selfconsistent;
D O I
10.1007/s11082-010-9375-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Multiscale methods coupling quantum mechanical/atomistic models such as envelope function and tight binding approaches with continuous media models e.g. for strain or electronic transport are very useful for an accurate simulation of modern and emerging electronic and optoelectronic devices based on nanostructured active regions. We present simulations using TiberCAD whose main focus is on providing an integrated multiscale/multiphysics simulation environment.
引用
收藏
页码:671 / 679
页数:9
相关论文
共 7 条
[1]   TIBERCAD: A new multiscale simulator for electronic and optoelectronic devices [J].
Auf der Maur, M. ;
Povolotskyi, M. ;
Sacconi, F. ;
Di Carlo, A. .
SUPERLATTICES AND MICROSTRUCTURES, 2007, 41 (5-6) :381-385
[2]  
Chen Z., 2005, Finite Element Methods and Their Applications
[3]   k center dot p method for strained wurtzite semiconductors [J].
Chuang, SL ;
Chang, CS .
PHYSICAL REVIEW B, 1996, 54 (04) :2491-2504
[4]  
CHUANG SL, 1995, WILEY SERIES PURE AP
[5]   Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation [J].
Di Carlo, A .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (01) :R1-R31
[6]   Elasticity theory of pseudomorphic heterostructures grown on substrates of arbitrary thickness [J].
Povolotskyi, Michael ;
Di Carlo, Aldo .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (06)
[7]   RIGOROUS THERMODYNAMIC TREATMENT OF HEAT-GENERATION AND CONDUCTION IN SEMICONDUCTOR-DEVICE MODELING [J].
WACHUTKA, GK .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1990, 9 (11) :1141-1149