Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection

被引：17

作者：

Plis, E. ^{[1
]}

Khoshakhlagh, A. ^{[1
]}

Myers, S. ^{[1
]}

Kim, H. S. ^{[1
]}

Gautam, N. ^{[1
]}

Sharma, Y. D. ^{[1
]}

Krishna, S. ^{[1
]}

Lee, S. J. ^{[2
]}

Noh, S. K. ^{[2
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[2] KRISS, Taejon 305600, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 03期

关键词：

current density; gallium compounds; III-V semiconductors; indium compounds; infrared detectors; molecular beam epitaxial growth; photodetectors; semiconductor growth; semiconductor superlattices; MINORITY-CARRIER LIFETIMES; INAS/INXGA1-XSB SUPERLATTICES; INAS/GA1-XINXSB SUPERLATTICE; TEMPERATURE LIMITS; OPTICAL-PROPERTIES; BAND-STRUCTURE; PERFORMANCE; DETECTIVITIES; SCATTERING;

D O I：

10.1116/1.3276429

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report on investigation of type-II InAs/GaSb and InAs/InxGa1-xSb strained layer superlattices (SLSs) for long-wave infrared detection. Growth conditions were optimized to obtain nearly lattice matched (Delta a/a similar to 0.03%) 13 ML InAs/7 ML GaSb SLS nBn detector structure with cutoff wavelength of similar to 8.5 mu m (77 K). Dark current density was equal to 3.2x10(-4) A/cm(2) (V-b=+50 mV, 77 K) for this detector structure. Thin 10 ML InAs/6 ML In0.35Ga0.65Sb SLS was grown with zero lattice mismatch achieved by incorporation of 2.5 ML of GaAs in every SLS period. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3276429]

引用

页数：6

共 49 条

[1] nBn detectors based on InAs/GaSb type-II strain layer superlattice
Bishop, G.
Plis, E.
Rodriguez, J. B.
Sharma, Y. D.
Kim, H. S.
Dawson, L. R.
Krishna, S.
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (03): : 1145 - 1148
[2] Surface reconstruction phase diagrams for InAs, AlSb, and GaSb
Bracker, AS
Yang, MJ
Bennett, BR
Culbertson, JC
Moore, WJ
[J]. JOURNAL OF CRYSTAL GROWTH, 2000, 220 (04) : 384 - 392
[3] InAs/InGaSb superlattices for very long wavelength infrared detection
Brown, GJ
Szmulowicz, F
[J]. PHOTODETECTORS: MATERIALS AND DEVICES VI, 2001, 4288 : 200 - 208
[4] Pseudopotential methods for superlattices: Applications to mid-infrared semiconductor lasers
Dente, GC
Tilton, ML
[J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) : 1420 - 1429
[5] High performance InAs/Ga1-xInxSb superlattice infrared photodiodes
Fuchs, F
Weimer, U
Pletschen, W
Schmitz, J
Ahlswede, E
Walther, M
Wagner, J
Koidl, P
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (22) : 3251 - 3253
[6] THEORETICAL PERFORMANCE OF VERY LONG-WAVELENGTH INAS/INXGA1-XSB SUPERLATTICE BASED INFRARED DETECTORS
GREIN, CH
CRUZ, H
FLATTE, ME
EHRENREICH, H
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (20) : 2530 - 2532
[7] TEMPERATURE LIMITS ON INFRARED DETECTIVITIES OF INAS/INXGA1-XSB SUPERLATTICES AND BULK HG1-XCDXTE - REPLY
GREIN, CH
FLATTE, ME
EHRENREICH, H
MILES, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (08) : 4156 - 4158
[8] MINORITY-CARRIER LIFETIMES IN IDEAL INGASB/INAS SUPERLATTICES
GREIN, CH
YOUNG, PM
EHRENREICH, H
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (24) : 2905 - 2907
[9] Exploring optimum growth for high quality InAS/GaSb type-II superlattices
Haugan, HJ
Grazulis, L
Brown, GJ
Mahalingam, K
Tomich, DH
[J]. JOURNAL OF CRYSTAL GROWTH, 2004, 261 (04) : 471 - 478
[10] SUPERLATTICE PARAMETERS FOR OPTIMUM ABSORPTION IN INAS/INXGA1-XSB SUPERLATTICE INFRARED DETECTORS
HELLER, ER
FISHER, K
SZMULOWICZ, F
MADARASZ, FL
[J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (11) : 5739 - 5746

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