Synthesis of silicon nanowires with wurtzite crystalline structure by using standard chemical vapor deposition

被引：144

作者：

Fontcuberta i Morral, Anna

Arbiol, Jordi

Prades, Joan Daniel

Cirera, Albert

Morante, Joan Ramon

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-86748 Garching, Germany

[2] Univ Barcelona, TEM MAT, Serv Cientificotecn, E-08028 Barcelona, Spain

[3] Univ Barcelona, Dept Elect, EME, CeRMAE,IN2UB, E-08028 Barcelona, Spain

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 10期

关键词：

D O I：

10.1002/adma.200602318

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Silicon nanowires-filamentary crystals with a very high ratio of length to diameter (see figure) - allow growth of the wurtzite crystalline phase, which is also semiconducting for silicon. The association of this phenomenon with the competition between surface energy and pressure effects occurring at diameters below 150 nm is shown.

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页码：1347 / +

页数：6

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