Rapid In-Situ Carbon and Oxygen Cleaning of In0.53Ga0.47As(001) and Si0.5Ge0.5(110) Surfaces via a H2 RF Downstream Plasma

被引：1

作者：

Wolf, S. ^{[1
]}

Edmonds, M. ^{[1
]}

Jiang, X. ^{[2
]}

Droopad, R. ^{[3
]}

Yoshida, N. ^{[4
]}

Dong, L. ^{[4
]}

Galatage, R. ^{[5
]}

Siddiqui, S. ^{[5
]}

Sahu, B. ^{[5
]}

Kummel, A. ^{[6
]}

机构：

[1] Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USA

[2] PIE Sci LLC, San Mateo, CA 94402 USA

[3] Texas State Univ, Ingram Sch Engn, 601 Univ Dr, San Marcos, TX 78666 USA

[4] Appl Mat Inc, 974 E Argues Ave, Sunnyvale, CA 94085 USA

[5] GLOBALFOUNDRIES, 400 Stone Break Rd Extens, Malta, NY 12020 USA

[6] Univ Calif San Diego, Dept Chem, La Jolla, CA 92093 USA

来源：

SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 6 | 2016年 / 72卷 / 04期

关键词：

SI(100) SURFACES; HYDROGEN; SILICON; NH3/NF3; REMOVAL;

D O I：

10.1149/07204.0291ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The In0.53Ga0.47As(001) and Si0.5Ge0.5(110) surfaces were cleaned using a downstream RF plasma. On the air-exposed In0.53Ga0.47As(001) surface, a 2 second 100 millitorr H-2 plasma dose fully removed carbon and oxygen. On the ex-situ wet cleaned Si0.5Ge0.5(110) surface, nearly all carbon and oxygen are removed via a 2 second exposure of 5% H-2 in Ar plasma. To prevent oxygen deposition from the plasma tube while maximizing the atomic H flux, for Si0.5Ge0.5(110), the plasma power, pressure, and gas composition must be controlled. The Si0.5Ge0.5(110) surface is more sensitive than the In0.53Ga0.47As(001) surface to trace oxygen in the plasma stream consistent with the higher heat of formation per Si of SiO2 than the heat of formation per Ga of Ga2O3. The higher heat of formation of SiO2 is expected to both increase oxygen adsorption and prevent the atomic H from forming volatile products with SiO2 on Si0.5Ge0.5(110), in contrast to In0.53Ga0.47As(001).

引用

页码：291 / 302

页数：12

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