The optical properties of CdS crystal grown by the sublimation method

被引:66
作者
Hong, KJ [1 ]
Jeong, TS
Yoon, CJ
Shin, YJ
机构
[1] Chosun Univ, Dept Phys, Kwangju 501759, South Korea
[2] Suncheon Natl Univ, Dept Phys, Sunchon 540742, South Korea
[3] Joenbuk Natl Univ, Dept Phys, Joenbuk 560756, South Korea
[4] Joenbuk Natl Univ, SPRC, Joenbuk 560756, South Korea
关键词
CdS; sublimation method; photoluminescence; photocurrent; energy band gap;
D O I
10.1016/S0022-0248(00)00491-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A cadmium sulfide (CdS) single crystal was grown by the sublimation method without a seed crystal in a two-stage vertical electric furnace. The carrier concentration and mobility obtained from Hall measurements at room temperature were 2.90 x 10(16) h cm(-3) and 316 cm(2)/Vs, respectively. The photoluminescence and the photocurrent measurement of the CdS single crystal have been performed in the temperature ranging from 20 to 293 K. From the photoluminescence measurement, the energy of the free exciton Ex(A) and Ex(B) has been obtained to be 2.5511 and 2.5707 eV, respectively. The variance of the peak position, intensity, and linewidth of the free excitons as a function of the temperature have been investigated by means of the conventional empirical relations and Toyozawa's theory. The crystal field of the CdS and its splitting energy, Delta c(r), have been found to be 19.6 meV. In the photocurrent measurement, only the Ex(A) exciton peak has been observed. The energy band gap of the CdS at room temperature was determined to be 2.4749eV by the photoluminescence and photocurrent measurement. Also, the temperature dependence of the energy band gap of the CdS, E-g(T), has been examined. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:19 / 26
页数:8
相关论文
共 29 条
[1]  
Blackmore J. S., 1985, SOLID STATE PHYS, P364
[2]   INFLUENCE OF MAGNETIC-FIELDS UP TO 20-T ON EXCITONS AND POLARITONS IN CDS AND ZNO [J].
BLATTNER, G ;
KURTZE, G ;
SCHMIEDER, G ;
KLINGSHIRN, C .
PHYSICAL REVIEW B, 1982, 25 (12) :7413-7427
[3]  
BUBE RH, 1969, PHOTOCONDUCTIVITY SO, P391
[4]   Post-growth annealing of CdS crystals grown by physical vapor transport [J].
Chen, KT ;
Zhang, Y ;
Egarievwe, SU ;
George, MA ;
Burger, A ;
Su, CH ;
Sha, YG ;
Lehoczky, SL .
JOURNAL OF CRYSTAL GROWTH, 1996, 166 (1-4) :731-735
[5]  
Cho K., 1979, TOP CURR PHYS, V14, P8
[6]   PHOTOLUMINESCENCE OF DEFECT-EXCITON COMPLEXES IN 2-6 COMPOUNDS [J].
HALSTED, RE ;
AVEN, M .
PHYSICAL REVIEW LETTERS, 1965, 14 (03) :64-&
[7]   DONOR-ACCEPTOR PAIR LINES IN CADMIUM SULFIDE [J].
HENRY, CH ;
FAULKNER, RA ;
NASSAU, K .
PHYSICAL REVIEW, 1969, 183 (03) :798-&
[8]   HOT-WALL EPITAXY OF CDS THIN-FILMS AND THEIR PHOTOLUMINESCENCE [J].
HUMENBERGER, J ;
LINNERT, G ;
LISCHKA, K .
THIN SOLID FILMS, 1984, 121 (01) :75-83
[9]  
Kittel C, 1976, INTRO SOLID STATE PH, V5, P28
[10]   Spin exchange in excitons, the quasicubic model and deformation potentials in II-VI compounds [J].
Langer, D. W. ;
Euwema, R. N. ;
Era, Koh ;
Koda, Takao .
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :4005-4022