Robust X-Band Low Noise Limiting Amplifiers

被引：0

作者：

Schuh, Patrick ^{[1
]}

Reber, Rolf ^{[1
]}

机构：

[1] CASSIDIAN, Worthstr 85, D-89077 Ulm, Germany

来源：

2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS) | 2013年

关键词：

GaN; MMICs; Low noise amplifier; Limiter;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN technology is today well established for power amplifiers but also for robust receiver components. In this paper we present the design and measurement results of two different robust LNAs with different limiter functionalities included. One version with 1.6 dB noise figure which survives 4W input power and with the included current limiter the maximum output power is only 17 dBm. The other version with input limiter survives more than 10W input power with a noise figure of 2 dB.

引用

页数：4

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