Nanometer scale characterisation of COSi2 and NiSi induced strain in Si by convergent beam electron diffraction

被引:17
作者
Benedetti, A
Bender, H
Torregiani, C
Van Dal, M
Maex, K
机构
[1] IMEC, BE-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, EE Dept, B-3001 Heverlee, Belgium
[3] Philips Res Leuven, B-3001 Louvain, Belgium
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 114卷
关键词
silicides; strain; convergent beam electron diffraction;
D O I
10.1016/j.mseb.2004.07.035
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicides, widely used as contacts in complementary MOS (CMOS) devices, are expected to introduce large distortions in the underlying silicon, which may have an impact on the device performances. In this work, we employed the convergent beam electron diffraction (CBED) technique in a TEM to map stress in the silicon active areas in structures with different channel lengths spaced by differently sized stripes of two different silicides, NiSi and COSi2. In this way, the influence of both composition and size on stress in the silicon was separately analysed and compared to finite element simulations. The results on CoSi2 indicate presence of tensile stress in the Si region below the gate, gradually turning to compressive as the distance between the silicide layers increases. NiSi layers appear to introduce a lower stress than CoSi2. Asymmetric stress distribution in NiSi structures appears to be related to the different morphology (possibly grain orientation) of the silicide/Si interfaces. CBED patterns with split diffraction lines, which hinders stress analysis, were recorded at shallow depths below the gate/Si interface. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:61 / 66
页数:6
相关论文
共 11 条
[1]  
[Anonymous], 1999, P P 25 INT S TEST FA
[2]  
Armigliato A, 2001, PROCEEDINGS OF THE 5TH MULTINATIONAL CONGRESS ON ELECTRON MICROSCOPY, P285
[3]  
Armigliato A, 2001, INST PHYS CONF SER, P467
[4]  
ARMIGLIATO A, 2002, SPRINGER LECT NOTES, V588, P833
[5]  
Balboni R, 1998, PHILOS MAG A, V77, P67, DOI 10.1080/01418619808214231
[6]   Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED [J].
Benedetti, A ;
Cullis, AG ;
Armigliato, A ;
Balboni, R ;
Frabboni, S ;
Mastracchio, GF ;
Pavia, G .
APPLIED SURFACE SCIENCE, 2002, 188 (1-2) :214-218
[7]   HIGHER-ORDER LAUE ZONE EFFECTS IN ELECTRON-DIFFRACTION AND THEIR USE IN LATTICE-PARAMETER DETERMINATION [J].
JONES, PM ;
RACKHAM, GM ;
STEEDS, JW .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1977, 354 (1677) :197-&
[8]  
Pantel R., 2003, MICROSC MICROANAL, V9, P866, DOI 10.1017/S1431927603444334
[9]   Influence of process-induced stress on device characteristics and its impact on scaled device performance [J].
Smeys, P ;
Griffin, PB ;
Rek, ZU ;
De Wolf, I ;
Saraswat, KC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (06) :1245-1252
[10]  
Torregiani C, 2004, THERMAL AND MECHANICAL SIMULATION AND EXPERIMENTS IN MICROELECTRONICS AND MICROSYSTEMS, P61