Blending induced stack-ordering and performance improvement in a solution-processed n-type organic field-effect transistor

被引：23

作者：

Wei, Zhongming ^{[1
,2
]}

Xi, Hongxia ^{[1
,2
]}

Dong, Huanli ^{[1
]}

Wang, Linjun ^{[1
]}

Xu, Wei ^{[1
]}

Hu, Wenping ^{[1
]}

Zhu, Daoben ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2010年 / 20卷 / 06期

基金：

中国国家自然科学基金;

关键词：

THIN-FILM TRANSISTORS; PERYLENE DIIMIDES; EFFECT MOBILITY; SEMICONDUCTORS; TRANSPORT; ELECTRON; TETRATHIAFULVALENE; DEVICES; DERIVATIVES; DESIGN;

D O I：

10.1039/b918874f

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The mobilities of the solution-processed n-type organic semiconductor, N,N'-di((Z)-9-octadecene)-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-e), were dramatically improved (up to 30 times) by blending with electron donors. The reason can be assigned to the facilitated charge transport due to the increased stack-ordering and crystallinity of the spin-coated thin films after blending. This provides a new way to enhance the performance of existing organic semiconductors by intentional blending.

引用

页码：1203 / 1207

页数：5

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