Performance enhancement of perovskite solar cells via modification of the TiO2/perovskite interface with oxygen plasma treatment

被引:4
作者
Wang, Yumeng [1 ,2 ]
Wang, Dongdong [2 ]
Qu, Hao [1 ,2 ]
Cheng, Jiushan [1 ,2 ]
Fang, Yi [3 ]
Zhang, Chunmei [1 ,2 ]
Chen, Qiang [1 ,2 ]
机构
[1] Beijing Inst Graph Commun, Lab Plasma Phys & Mat, Beijing 102600, Peoples R China
[2] Sch Printing & Packaging Engn, Beijing Key Lab Printing & Packaging Mat & Techno, Beijing 102600, Peoples R China
[3] Beijing Inst Graph Commun, Beijing Engn Res Ctr Printed Elect, Beijing 102600, Peoples R China
基金
中国国家自然科学基金;
关键词
Atomic layer deposition; Oxygen plasma; Atomic oxygen radical; Perovskite solar cell; Low temperature processing; HOLE-CONDUCTOR-FREE; ELECTRON EXTRACTION; TIO2; LAYER; VACANCIES; WETTABILITY; HYSTERESIS; TIO2(110); STABILITY; O-2;
D O I
10.1016/j.tsf.2020.137786
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-temperature (similar to 500 degrees C) sintering is a routine post-treatment to fabricate compact Titanium dioxide (TiO2) electron selective layer (ESL) in high-performance perovskite solar cells (PSCs). Here, we propose an effective low-temperature (<150 degrees C) approach: pinhole-free and compact ultrathin TiO2 layers are fabricated via thermal atomic layer deposition (ALD) following a low-pressure oxygen plasma treatment. The hydrophilicity of TiO2 surfaces can be suitably tailored, which favors precursor solution being well spread and the growth of perovskite film. In addition, effective removal of oxygen vacancies serving as unproductive quenching sites in TiO2 surface is observed, which is attributed to atomic oxygen radical, the most reactive species generated in oxygen plasma. The PSC device with oxygen-plasma-treated ALD-TiO2 ESL achieves an efficiency of 14.9%, which is better than 13.3% of the device with 500 degrees C- sintered ALD-TiO2 ESL and comparable to 14.3% of the device with conventional 500 degrees C-sintered Sol-gel-TiO2 ESL under our conditions.
引用
收藏
页数:8
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