Spin engineering in ultrathin Cu/Co/Cu(110)

被引：73

作者：

Hope, S ^{[1
]}

Gu, E ^{[1
]}

Choi, B ^{[1
]}

Bland, JAC ^{[1
]}

机构：

[1] Cavendish Lab, Cambridge CB3 0HE, England

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.80.1750

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied the effect of depositing Cu overlayers onto CO gas dosed Co/Cu(110) ultrathin films (6 < d(Co) < 30 monolayers). We find that submonolayer Cu coverages can completely reverse the in-plane 90 degrees easy axis switch caused by the CO adsorption for all Co thicknesses studied and for sufficiently thick Co films (d(Co) > 15 monolayers). This enables us to "controllably engineer" the direction of the easy axis at a constant Co thickness.

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收藏

页码：1750 / 1753

页数：4

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