Localization and one-parameter scaling in hydrogenated graphene

被引：45
作者：
Bang, Junhyeok [1 ]
Chang, K. J. [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea
来源：
PHYSICAL REVIEW B | 2010年 / 81卷 / 19期
基金：
新加坡国家研究基金会;
关键词：
BERRYS PHASE; ABSENCE; SCATTERING;
D O I：
10.1103/PhysRevB.81.193412
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report a metal-insulator transition in disordered graphene with low coverages of hydrogen atoms. Hydrogen interacting with graphene creates short-range disorder and localizes states near the neutrality point. The energy range of localization grows with increasing of H concentration. Calculations show that the conductances through low-energy propagating channels decay exponentially with sample size and are well fitted by one-parameter scaling function, similar to a disorder-driven metal-insulator transition in two-dimensional disordered systems.
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页数：4
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