Surface morphologies and optical properties in CdxZn1-xTe/ZnTe quantum dots grown on GaAs (100) and Si (100) substrates

被引：4

作者：

Lee, H. S. ^{[1
]}

Kim, H. J.

Choi, J. C.

Park, H. L.

Kim, J. S.

Kim, T. W.

机构：

[1] Yonsei Univ, Dept Phys, Seoul 120749, South Korea

[2] Pukyong Natl Univ, Div Image Informat Sci & Engn, Pusan 608739, South Korea

[3] Hanyang Univ, Adv Semicond Res Ctr, Div Elect & Comp Engn, Seoul 133791, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2007年 / 50卷 / 03期

关键词：

nanostructures; quantum dots; CdZnTe; atomic force microscopy; photoluminescence;

D O I：

10.3938/jkps.50.759

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied the growth of self-assembled Cd0.6Zn0.4Te/ZnTe quantum dots (QDs) grown on both GaAs (100) and Si (100) substrates by using molecular beam epitaxy (MBE). The atomic force microscopy (AFM) images showed that Cd0.6Zn0.4Te/ZnTe QDs were formed on GaAs (100) and Si (100) substrates. The photoluminescence (PL) spectra at 25 K for the Cd0.6Zn0.4Te/ZnTe QDs grown on GaAs (100) and Si (100) substrates correspond to the exciton transition from the ground-state electronic subband to the ground-state heavy-hole band (E-1-HH1). The activation energy of the electrons confined in the Cd0.6Zn0.4Te/ZnTe QDs grown on GaAs (100) and Si (100) substrates was obtained from the temperature-dependent PL spectra.

引用

页码：759 / 762

页数：4

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