Tunneling magnetoresistance induced by controllable formation of Co filaments in resistive switching Co/ZnO/Fe structures

被引：27

作者：

Yang, Zhihuan ^{[1
]}

Zhan, Qingfeng

Zhu, Xiaojian

Liu, Yiwei

Yang, Huali

Hu, Benlin

Shang, Jie

Pan, Liang

Chen, Bin

Li, Run-Wei

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China

来源：

EPL | 2014年 / 108卷 / 05期

关键词：

ROOM-TEMPERATURE; GIANT MAGNETORESISTANCE; FERROMAGNETIC-FILMS; SPIN POLARIZATION; JUNCTIONS; MEMORIES; EXCHANGE;

D O I：

10.1209/0295-5075/108/58004

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrated that the formation of magnetic conductive filaments in Co/ZnO/Fe sandwich structures can be employed to produce a nanoscale magnetic tunnel junction (MTJ) and control the tunneling magnetoresistance (TMR). The pristine Co/ZnO/Fe structures with a 100nm thick ZnO layer do not exhibit any remarkable TMR. Under voltage sweeps performed on the sandwich devices, Co conductive filaments were grown in a ZnO layer, which leads to the formation of nanoscale Co/ZnO/Fe MTJs and the occurrence of TMR. In addition, a sign inversion of TMR was found in the nano-MTJs by carrying out the further voltage sweeps or varying the measuring bias voltage, which could be well understood in terms of the resonant tunneling caused by impurity scattering in a ZnO barrier. Copyright (C) EPLA, 2014

引用

页数：6

共 41 条

[11] TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].

JULLIERE, M .

PHYSICS LETTERS A, 1975, 54 (03) :225-226

[12] Printable Giant Magnetoresistive Devices [J].

Karnaushenko, Daniil ;

Makarov, Denys ;

Yan, Chenglin ;

Streubel, Robert ;

Schmidt, Oliver G. .

ADVANCED MATERIALS, 2012, 24 (33) :4518-4522

[13] Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook [J].

Kim, Kyung Min ;

Jeong, Doo Seok ;

Hwang, Cheol Seong .

NANOTECHNOLOGY, 2011, 22 (25)

[14] Memristive switching of MgO based magnetic tunnel junctions [J].

Krzysteczko, Patryk ;

Reiss, Guenter ;

Thomas, Andy .

APPLIED PHYSICS LETTERS, 2009, 95 (11)

[15] Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM [J].

Liu, Qi ;

Sun, Jun ;

Lv, Hangbing ;

Long, Shibing ;

Yin, Kuibo ;

Wan, Neng ;

Li, Yingtao ;

Sun, Litao ;

Liu, Ming .

ADVANCED MATERIALS, 2012, 24 (14) :1844-1849

[16] Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device [J].

Liu, Qi ;

Dou, Chunmeng ;

Wang, Yan ;

Long, Shibing ;

Wang, Wei ;

Liu, Ming ;

Zhang, Manhong ;

Chen, Junning .

APPLIED PHYSICS LETTERS, 2009, 95 (02)

[17] Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].

Liu, SQ ;

Wu, NJ ;

Ignatiev, A .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751

[18] ELECTRON-TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].

MAEKAWA, S ;

GAFVERT, U .

IEEE TRANSACTIONS ON MAGNETICS, 1982, 18 (02) :707-708

[19]

MIYAZAKI T, 1995, J MAGN MAGN MATER, V139, pL231, DOI 10.1016/0304-8853(94)01648-8

[20] LARGE MAGNETORESISTANCE AT ROOM-TEMPERATURE IN FERROMAGNETIC THIN-FILM TUNNEL-JUNCTIONS [J].

MOODERA, JS ;

KINDER, LR ;

WONG, TM ;

MESERVEY, R .

PHYSICAL REVIEW LETTERS, 1995, 74 (16) :3273-3276

← 1 2 3 4 5 →