Tunneling magnetoresistance induced by controllable formation of Co filaments in resistive switching Co/ZnO/Fe structures

被引：27

作者：

Yang, Zhihuan ^{[1
]}

Zhan, Qingfeng

Zhu, Xiaojian

Liu, Yiwei

Yang, Huali

Hu, Benlin

Shang, Jie

Pan, Liang

Chen, Bin

Li, Run-Wei

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China

来源：

EPL | 2014年 / 108卷 / 05期

关键词：

ROOM-TEMPERATURE; GIANT MAGNETORESISTANCE; FERROMAGNETIC-FILMS; SPIN POLARIZATION; JUNCTIONS; MEMORIES; EXCHANGE;

D O I：

10.1209/0295-5075/108/58004

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrated that the formation of magnetic conductive filaments in Co/ZnO/Fe sandwich structures can be employed to produce a nanoscale magnetic tunnel junction (MTJ) and control the tunneling magnetoresistance (TMR). The pristine Co/ZnO/Fe structures with a 100nm thick ZnO layer do not exhibit any remarkable TMR. Under voltage sweeps performed on the sandwich devices, Co conductive filaments were grown in a ZnO layer, which leads to the formation of nanoscale Co/ZnO/Fe MTJs and the occurrence of TMR. In addition, a sign inversion of TMR was found in the nano-MTJs by carrying out the further voltage sweeps or varying the measuring bias voltage, which could be well understood in terms of the resonant tunneling caused by impurity scattering in a ZnO barrier. Copyright (C) EPLA, 2014

引用

页数：6

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