共 50 条
- [41] OXYGEN-RELATED GETTERING OF SILICON DURING GROWTH OF BULK GAAS BRIDGMAN CRYSTALS JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (09): : 1841 - 1856
- [42] IR studies of oxygen-related and carbon-related defects in Sn-doped silicon PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3, 2011, 8 (03): : 701 - 704
- [45] Oxygen-related defects in the top silicon layer of SIMOX; the effect of thermal treatments MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 73 (1-3): : 77 - 81
- [47] Electrical characteristic of oxygen-related donors in p-type czochralski silicon Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2002, 23 (04): : 377 - 381
- [49] OXYGEN-RELATED DONORS FORMED AT 600-DEGREES-C IN SILICON IN DEPENDENCE ON OXYGEN AND CARBON CONTENT PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 77 (02): : 571 - 582
- [50] OXYGEN-RELATED DEFECTS IN IRRADIATED GERMANIUM JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06): : L353 - L355