共 50 条
[41]
Infrared studies of oxygen-related defect formation in neutron-irradiated Cz-silicon after annealing at T=450-650 °C under hydrostatic pressure
[J].
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,
2003, 102 (1-3)
:339-343
[43]
Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium
[J].
Semiconductors,
1999, 33
:1084-1087
[44]
Generation of Reactive Oxygen Species from Silicon Nanowires
[J].
ENVIRONMENTAL HEALTH INSIGHTS,
2014, 8
:21-29
[45]
Characterisation of hydrogen and hydrogen-related centres in crystalline silicon by magnetic-resonance spectroscopy
[J].
DEFECT INTERACTION AND CLUSTERING IN SEMICONDUCTORS,
2002, 85-86
:353-413
[46]
Oxygen-related defects introduced by As+-implantation through cap layers in Si probed by monoenergetic positron beams
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
2000, 39 (11)
:6126-6129
[47]
Identification of a fast diffusing oxygen species in silicon based on the generation rate of thermal donors
[J].
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,
2015, 252 (04)
:816-820
[48]
Formation of oxygen-related defects enhanced by fluorine in BF2+-implanted Si studied by a monoenergetic positron beam
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1995, 34 (12A)
:6293-6297