Analytical model for the surface field distribution of SOI RESURF devices

被引：49

作者：

Chung, SK ^{[1
]}

Han, SY ^{[1
]}

机构：

[1] Ajou Univ, Sch Elect & Elect Engn, Suwon 442749, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 06期

关键词：

high-voltage devices; solid-state power;

D O I：

10.1109/16.678582

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical model is presented to determine the electric field distribution along the semiconductor surface of silicon-on-insulator (SOI) REduced SURface Field (RESURF) devices, which allows an approximate but explicit expression for the surface field in terms of the doping concentration, the lengths of the gate and drain field plate, the thicknesses of the gate and buried oxide, and the applied voltages. Numerical simulations support the analytical results.

引用

页码：1374 / 1376

页数：3

共 4 条

[1]

APPELS JA, 1980, PHILIPS J RES, V35, P1

[2] An analytical model for minimum drift region length of SOI RESURF diodes [J].

Chung, SK ;

Han, SY ;

Shin, JC ;

Choi, YI ;

Kim, SB .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (01) :22-24

[3] AN ANALYTICAL METHOD FOR 2-DIMENSIONAL FIELD DISTRIBUTION OF A MOS STRUCTURE WITH A FINITE-FIELD PLATE [J].

CHUNG, SK ;

YOO, DC ;

CHOI, YI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (01) :192-194

[4] SHORT-CHANNEL EFFECT IN FULLY DEPLETED SOI MOSFETS [J].

YOUNG, KK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) :399-402

← 1 →