Application of solar cell using II-III-VI compound thin film fabricated by conventional sputtering process

被引：1

作者：

Deguchi, H. ^{[1
]}

机构：

[1] Ricoh Co Ltd, Res & Dev Grp, Device Technol Dev Ctr, Yokohama, Kanagawa 2240035, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 7-8 | 2014年 / 11卷 / 7-8期

关键词：

solar cell; II-III-VI compounds; sputtering process; ZNIN2S4;

D O I：

10.1002/pssc.201300735

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to achieve low cost solar cells, a novel type multinary compound thin film solar cell using ZnInS (II-III-VI) thin film as n-type layer and other layer fabricated by the conventional sputtering process were realized. An AgInTe/ZnInS thin film solar cell fabricated by the conventional sputtering process showed the conversion efficiency is 1.1%. In this study, p-type materials suitable for ZnInS and doping ZnInS with additive elements such as IIa (Ca,Sr) and VIb (O) group elements were investigated to improve the characteristics of ZnInS thin film solar cell. As the results, the best conversion efficiency of 2.8% was obtained CuInGaSe/CaZnInS thin film solar cell. This value is superior to that of AgInTe/ZnInS thin film solar cell by 2.5 times. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

引用

页码：1286 / 1291

页数：6

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