Efficiency Improvement of Silicon Solar Cells by Nitric Acid Oxidization

被引：7

作者：

Hu, Yeng-Cheng ^{[1
]}

Chiu, Ming-Hui ^{[1
]}

Wang, Likarn ^{[1
]}

Tsai, Jing-Long

机构：

[1] Natl Tsing Hua Univ, Inst Photon Technol, Hsinchu 30013, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 02期

关键词：

SURFACE PASSIVATION; SI;

D O I：

10.1143/JJAP.49.022301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we investigate the effect of nitric acid oxidation on p-type silicon solar cells. The oxide layer on the surface of a p-type silicon substrate was grown under various growth times and temperatures while under nitric acid treatment. After 30 min of growth at 23 degrees C, an efficiency improvement of absolute 2% was obtained using our laboratory fabrication process. (C) 2010 The Japan Society of Applied Physics

引用

页数：4

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