Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers

被引：38

作者：

Zhang, Hai Zhong ^{[1
]}

Cao, Hong Tao ^{[1
]}

Chen, Ai Hua ^{[1
]}

Liang, Ling Yan ^{[1
]}

Liu, Zhi Min ^{[1
]}

Wan, Qing ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Div Funct Mat & Nano Devices, Ningbo 315201, Zhejiang, Peoples R China

[2] Hunan Univ, Minist Educ, Key Lab Micronano Optoelect Devices, Changsha 410082, Hunan, Peoples R China

[3] Hunan Univ, State Key Lab Chemobiosensing & Chemometr, Changsha 410082, Hunan, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 04期

基金：

中国科学院院长基金特别;

关键词：

Indium oxide; Thin-film transistor; RF sputtering; Deposition pressure; ZNO;

D O I：

10.1016/j.sse.2009.12.025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication of bottom-gate thin-film transistors (TFTs) using indium-oxide (In2O3) thin films as active channel layers. The films were deposited on thermally grown silicon dioxide (SiO2)/n-type silicon (Si) at room temperature (RT) by radio-frequency (RF) magnetron sputtering. The effect of deposition pressure on the performance of In2O3-TFTs was investigated in detail. A significant improvement of the device performance was observed for In2O3-TFTs with the decrease of the working pressure, which is attributed to enhanced densification, better surface morphology of the In2O3 channel layers prepared at lower deposition pressure. The fabricated TFT with optimal device performance exhibited a field-effect mobility (mu(FE)) of 31.6 cm(2) V-1 s(-1), a drain current on/off ratio of similar to 10(7), a low off drain current of about 10(-10) A and a threshold voltage of 7.8 V. Good device performance and low processing temperature make the In2O3-TFTs suitable for the potential applications in the transparent electronics. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：479 / 483

页数：5

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