Thermal property engineering of InSe layer by a thin Al2O3 stress liner

We investigate the thermal properties of thin InSe layers with high-kappa oxide Al2O3 stress liners. Temperature-dependent Raman spectroscopy demonstrated that the Al2O3 passivation layer significantly reduced the thermal variation coefficients of the in-plane E-2g(1) phonon mode of the InSe layer from -0.03284 cm(-1)/K to -0.0212 cm(-1)/K in comparison with the InSe sample without the Al2O3 capping layer. Combined with power-dependent Raman spectroscopy, the in-plane thermal conductivity of InSe reaches about 53.1 W/mK, similar to 40% greater than that without the Al2O3 capping layer, 38.2 W/mK, which is attributed to the large thermal conductivity of Al2O3 and the electron-phonon interactions at the interface. Generally, this work will contribute to improving the performances of the InSe-based nano-devices and extending their applications profoundly. Published by AIP Publishing.