Single-photon emission from InGaAs quantum dots grown on (111) GaAs

被引：74

作者：

Stock, Erik ^{[1
]}

Warming, Till ^{[1
]}

Ostapenko, Irina ^{[1
]}

Rodt, Sven ^{[1
]}

Schliwa, Andrei ^{[1
]}

Toefflinger, Jan Amaru ^{[1
]}

Lochmann, Anatol ^{[1
]}

Toropov, Aleksandr I. ^{[2
]}

Moshchenko, Sergej A. ^{[2
]}

Dmitriev, Dimitry V. ^{[2
]}

Haisler, Vladimir A. ^{[2
]}

Bimberg, Dieter ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 09期

关键词：

excitons; gallium arsenide; III-V semiconductors; indium compounds; light polarisation; photoluminescence; quantum entanglement; quantum optics; semiconductor quantum dots; PAIRS;

D O I：

10.1063/1.3337097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we demonstrate that self-organized InGaAs quantum dots (QDs) grown on GaAs (111) substrate using droplet epitaxy have great potential for the generation of entangled photon pairs. The QDs show spectrally sharp luminescence lines and low spatial density. A second order correlation value of g((2))(0)< 0.3 proves single-photon emission. By comparing the power dependence of the luminescence from a number of QDs we identify a typical luminescence fingerprint. In polarization dependent microphotoluminescence studies a fine-structure splitting ranging < 40 mu eV down to the determination limit of our setup (10 mu eV) was observed.

引用

页数：3

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