Doped Silicon Temperature Compensation of Surface Acoustic Wave Devices

被引：0

作者：

Ma, Yiming ^{[1
]}

Le, Xianhao ^{[2
]}

Merugu, Srinivas ^{[1
]}

Sharma, Jaibir ^{[1
]}

Wang, Nan ^{[1
]}

Lal, Amit ^{[1
]}

Lee, Chengkuo ^{[2
]}

Ng, Eldwin J. ^{[1
]}

机构：

[1] ASTAR, Inst Microelect, Singapore, Singapore

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore, Singapore

来源：

PROCEEDINGS OF THE 2020 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS) | 2020年

关键词：

surface acoustic wave; temperature compensation; doped silicon; YOUNGS MODULUS; DEPENDENCE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One of the critical performance parameters of surface acoustic wave (SAW) devices for frequency references and sensors is the temperature coefficient of frequency (TCF). Although aluminum nitride (AlN) and scandium-doped AlN (ScAlN) are attractive piezoelectric materials, the TCFs of AlN-based resonators are still relatively high. Here, doped silicon is employed as the temperature compensating material while a thin-film piezoelectric ScAlN is employed for actuation. SAW resonators with various in-plane orientations are designed, fabricated, and characterized under different temperatures. Zero TCF is realized in the SAW resonator arranged at around 75 degrees from the <100> direction of the (110) doped silicon wafer, demonstrating promising passive temperature compensation.

引用

页数：4

共 17 条

[1]

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[2] The temperature dependence of the Young's modulus of MgSiN2, AlN and Si3N4 [J].