Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

被引：44

作者：

Roberts, J. W. ^{[1
]}

Chalker, P. R. ^{[1
]}

Ding, B. ^{[2
]}

Oliver, R. A. ^{[2
]}

Gibbon, J. T. ^{[3
]}

Jones, L. A. H. ^{[3
]}

Dhanak, V. R. ^{[3
]}

Phillips, L. J. ^{[3
]}

Major, J. D. ^{[3
]}

Massabuau, F. C-P ^{[2
]}

机构：

[1] Univ Liverpool, Ctr Mat & Struct, Liverpool, Merseyside, England

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge, England

[3] Univ Liverpool, Stevenson Inst Renewable Energy, Liverpool, Merseyside, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2019年 / 528卷

基金：

英国工程与自然科学研究理事会;

关键词：

Characterization; Crystal structure; Crystal morphology; X-ray diffraction; Atomic layer epitaxy; Gallium compounds; GALLIUM OXIDE-FILMS; THIN-FILMS; BETA-GA2O3; PHASES; ALPHA; MOCVD;

D O I：

10.1016/j.jcrysgro.2019.125254

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O-2 plasma. The influence of substrate temperature and plasma processing parameters on the resultant crystallinity and optical properties of the Ga2O3 films were investigated. The deposition temperature was found to have a significant effect on the film crystallinity. At temperatures below 200 degrees C amorphous Ga2O3 films were deposited. Between 250 degrees C and 350 degrees C the films became predominantly alpha-Ga2O3. Above 350 degrees C the deposited films showed a mixture of alpha-Ga2O3 and epsilon-Ga2O3 phases. Plasma power and O-2 flow rate were observed to have less influence over the resultant phases present in the films. However, both parameters could be tuned to alter the strain of the film. Ultraviolet transmittance measurements on the Ga2O3 films showed that the bandgaps ranges from 5.0 eV to 5.2 eV with the largest bandgap of 5.2 eV occurring for the alpha-Ga2O3 phase deposited at 250 degrees C.

引用

页数：7

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