Measurement of the Spin Relaxation Time of Single Electrons in a Silicon Metal-Oxide-Semiconductor-Based Quantum Dot

被引:116
作者
Xiao, M. [1 ]
House, M. G. [1 ]
Jiang, H. W. [1 ]
机构
[1] Univ Calif Los Angeles, Dept Phys & Astron, Los Angeles, CA 90095 USA
关键词
D O I
10.1103/PhysRevLett.104.096801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We demonstrate direct detection of individual electron spin states, together with measurement of spin relaxation time (T-1), in silicon metal-oxide-semiconductor-based quantum dots (QD). Excited state spectroscopy of the QD has been performed using a charge-sensing technique. T-1 of single spin excited states has been done in the time domain by a pump-and-probe method. For an odd and an even number of electrons, we found a magnetic field dependent and invariant T-1, respectively.
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页数:4
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