A Two-Terminal Write-Once-Read-Many-Times-Memory Device Based on an Aluminum Nitride Thin Film Containing Al Nanocrystals

被引：8

作者：

Liu, Y. ^{[1
]}

Chen, T. P. ^{[2
]}

Ding, L. ^{[2
]}

Li, Y. B. ^{[3
]}

Zhang, S. ^{[4
]}

Fung, S. ^{[5
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[3] Harbin Inst Technol, Sch Astronaut, Ctr Composite Mat, Harbin 150080, Peoples R China

[4] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore

[5] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2010年 / 10卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

WORM; Memory; Nanocrystal; POST-BREAKDOWN CONDUCTION; CHALCOGENIDE GLASSES; SIO2-FILMS;

D O I：

10.1166/jnn.2010.2440

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A switching from a high-conduction state to a low-conduction state occurs in an AlN thin film containing Al nanocrystals (nc-Al) when the nc-Al is charged with electrons. The switching is explained in terms of breaking of the conductive percolation paths of the nc-Al as a result of the charging of the nc-Al. A write-once-read many times-memory (WORM) device is demonstrated based on this phenomenon. The device can be switched by charging the nc-Al with a voltage of +10 V for 100 ms, yielding a current ratio of the two memory states of more than 300 at the reading voltage of 1 V. The charged state (i.e., the low-conduction state) remains unchanged after more than 1 x 10(6) read cycles, and its retention time is predicted to be more than 10 years.

引用

页码：5796 / 5799

页数：4

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