Optimization of the structural and optical quality of InN nanowires on Si(111) by molecular beam epitaxy

被引：7

作者：

Chang, Y. -L. ^{[1
]}

Li, F. ^{[1
]}

Mi, Z. ^{[1
]}

机构：

[1] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 03期

关键词：

III-V semiconductors; indium compounds; molecular beam epitaxial growth; nanofabrication; nanowires; photoluminescence; semiconductor quantum wires; BAND-GAP; GROWTH; INDIUM; MBE; MORPHOLOGY;

D O I：

10.1116/1.3292560

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report on the growth and characterization of high quality InN nanowires on Si(111) by radio frequency plasma-assisted molecular beam epitaxy. InN nanowires with nontapered morphology were achieved with the use of an in situ deposited In seeding layer. They further examined the effects of the growth temperature, In/N flux ratio, as well as the thickness of the In seeding layer on the morphological, structural, and optical properties of InN nanowires grown directly on Si(111). It was observed that nontapered InN nanowires exhibit significantly improved optical quality compared to the conventionally grown InN nanowires.

引用

页数：5

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