Preparation of hafnium oxide thin film by electron beam evaporation of hafnium incorporating a post thermal process

被引：17

作者：

Xing, S ^{[1
]}

Zhang, NL ^{[1
]}

Song, ZT ^{[1
]}

Shen, QW ^{[1
]}

Lin, CL ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2003年 / 66卷 / 1-4期

关键词：

hafnium oxide; electron beam evaporation; thermal oxidation;

D O I：

10.1016/S0167-9317(02)00911-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron beam evaporation was employed to deposit hafnium on silicon (100) substrate, followed by a rapid thermal oxidation process to fabricate hafnium dioxide thin film. Hafnium was transformed to hafnium oxide above a oxidizing temperature of 500 T. An interfacial layer of hafnium silicate was observed between HfO2 and silicon substrate. Oxidation temperature greatly affects interfacial quality and leakage current of the film. (C) 2002 Published by Elsevier Science B.V.

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收藏

页码：451 / 456

页数：6

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