Highly ordered Co2FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy

被引：43
作者：
Kasahara, K. [1 ]
Yamamoto, K. [1 ]
Yamada, S. [1 ]
Murakami, T. [1 ]
Hamaya, K. [1 ,2 ]
Mibu, K. [3 ]
Miyao, M. [1 ,4 ]
机构：
[1] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan
[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan
[3] Nagoya Inst Technol, Nagoya, Aichi 4668555, Japan
[4] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 09期
关键词：
SILICON;
D O I：
10.1063/1.3350915
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate high-quality epitaxial growth of Heusler alloy Co2FeSi on Ge(111) by molecular beam epitaxy (MBE) at 200 degrees C. Even for growth at such a low temperature, L2(1)-ordered crystal structure is formed and highly uniform magnetic environments around the Fe sites are realized, by transmission electron diffraction and conversion electron Mossbauer spectroscopy, respectively. We also find that the magnetic moment reaches 5.37 mu B/f.u., which is the highest value in thin-film Co2FeSi samples reported. (C) 2010 American Institute of Physics. [doi:1 0.1063/1.3350915]
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页数：3
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  • [1] Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier
    Ando, Y.
    Hamaya, K.
    Kasahara, K.
    Kishi, Y.
    Ueda, K.
    Sawano, K.
    Sadoh, T.
    Miyao, M.
    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (18)
  • [2] Magnetic properties of epitaxially grown Fe3Si/Ge(111) layers with atomically flat heterointerfaces
    Ando, Y.
    Hamaya, K.
    Kasahara, K.
    Ueda, K.
    Nozaki, Y.
    Sadoh, T.
    Maeda, Y.
    Matsuyama, K.
    Miyao, M.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)
  • [3] Electronic measurement and control of spin transport in silicon
    Appelbaum, Ian
    Huang, Biqin
    Monsma, Douwe J.
    [J]. NATURE, 2007, 447 (7142) : 295 - 298
  • [4] Properties of the quaternary half-metal-type Heusler alloy Co2Mn1-xFexSi
    Balke, Benjamin
    Fecher, Gerhard H.
    Kandpal, Hem C.
    Felser, Claudia
    Kobayashi, Keisuke
    Ikenaga, Eiji
    Kim, Jung-Jin
    Ueda, Shigenori
    [J]. PHYSICAL REVIEW B, 2006, 74 (10)
  • [5] Highly ordered, half-metallic Co2FeSi single crystals
    Blum, C. G. F.
    Jenkins, C. A.
    Barth, J.
    Felser, C.
    Wurmehl, S.
    Friemel, G.
    Hess, C.
    Behr, G.
    Buechner, B.
    Reller, A.
    Riegg, S.
    Ebbinghaus, S. G.
    Ellis, T.
    Jacobs, P. J.
    Kohlhepp, J. T.
    Swagten, H. J. M.
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (16)
  • [6] A HALF-METALLIC BAND-STRUCTURE AND FE(2)MNZ (Z=AL, SI, P)
    FUJII, S
    ISHIDA, S
    ASANO, S
    [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1995, 64 (01) : 185 - 191
  • [7] Spin polarization of Co2FeSi full-Heusler alloy and tunneling magnetoresistance of its magnetic tunneling junctions
    Gercsi, Z.
    Rajanikanth, A.
    Takahashi, Y. K.
    Hono, K.
    Kikuchi, M.
    Tezuka, N.
    Inomata, K.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (08)
  • [8] Epitaxial ferromagnetic Fe3Si/Si(111) structures with high-quality heterointerfaces
    Hamaya, K.
    Ueda, K.
    Kishi, Y.
    Ando, Y.
    Sadoh, T.
    Miyao, M.
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (13)
  • [9] Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe3-xMnxSi Epilayers Grown on Ge(111)
    Hamaya, K.
    Itoh, H.
    Nakatsuka, O.
    Ueda, K.
    Yamamoto, K.
    Itakura, M.
    Taniyama, T.
    Ono, T.
    Miyao, M.
    [J]. PHYSICAL REVIEW LETTERS, 2009, 102 (13)
  • [10] Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact
    Jonker, Berend T.
    Kioseoglou, George
    Hanbicki, Aubrey T.
    Li, Connie H.
    Thompson, Phillip E.
    [J]. NATURE PHYSICS, 2007, 3 (08) : 542 - 546
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