Isotropic channel mobility in UMOSFETs on 4H-SiC C-face with vicinal off-angle

被引：25

作者：

Harada, S. ^{[1
]}

Ito, S. ^{[1
]}

Kato, M. ^{[1
]}

Takatsuka, A. ^{[1
]}

Kojima, K. ^{[1
]}

Fukuda, K. ^{[1
]}

Okumura, H. ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

UMOSFET; Carbon face; Vicinal off angle; Channel mobility; Threshold voltage; Trench; MOSFET;

D O I：

10.4028/www.scientific.net/MSF.645-648.999

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

UMOSFET is theoretically suitable to decrease the on-resistance of the MOSFET. In this study, in order to determine the cell structure of the SiC UMOSFET with extremely low on-resistance, influences of the orientation of the trench and the off-angle of the wafer on the MOS properties are investigated. The channel resistance, gate I-V curves and instability of threshold voltage are superior on the {11-20} planes as compared with other planes. On the vicinal off wafer, influence of the off-angle disappears and the properties on the equivalent planes are almost the same. The obtained results indicate that the extremely low on-resistance with the high stability and high reliability is possible in the SiC UMOSFET by the hexagonal cell composed of the six {11-20} planes on the vicinal off wafer, and actually an extremely low channel resistance was demonstrated on the hexagonal UMOSFET with the six {11-20} planes on the vicinal off wafer.

引用

页码：999 / 1004

页数：6

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