A 193 nm positive tone bilayer resist based on norbornene-maleic anhydride copolymers

被引：13

作者：

Sooriyakumaran, R ^{[1
]}

Fenzel-Alexander, D ^{[1
]}

Brock, PJ ^{[1
]}

Larson, CE ^{[1
]}

DiPietro, RA ^{[1
]}

Wallraff, GM ^{[1
]}

Hofer, DC ^{[1
]}

Dawson, DJ ^{[1
]}

Mahorowala, AP ^{[1
]}

Angelopoulos, M ^{[1
]}

机构：

[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2 | 2000年 / 3999卷

关键词：

bilayer resist; 193 nm lithography; silicon; norbornene; maleic anhydride; alternating copolymers;

D O I：

10.1117/12.388282

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have designed and developed a high resolution 193 nm bilayer resist system based on alternating copolymers of silane substituted norbornene and maleic anhydride. We have utilized a combination of acid labile silane functionalities and acid stable silicon groups in this resist development.

引用

页码：1171 / 1180

页数：8

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