A 193 nm positive tone bilayer resist based on norbornene-maleic anhydride copolymers

被引：13
|
作者：
Sooriyakumaran, R [1 ]
Fenzel-Alexander, D [1 ]
Brock, PJ [1 ]
Larson, CE [1 ]
DiPietro, RA [1 ]
Wallraff, GM [1 ]
Hofer, DC [1 ]
Dawson, DJ [1 ]
Mahorowala, AP [1 ]
Angelopoulos, M [1 ]
机构：
[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA
来源：
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2 | 2000年 / 3999卷
关键词：
bilayer resist; 193 nm lithography; silicon; norbornene; maleic anhydride; alternating copolymers;
D O I：
10.1117/12.388282
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have designed and developed a high resolution 193 nm bilayer resist system based on alternating copolymers of silane substituted norbornene and maleic anhydride. We have utilized a combination of acid labile silane functionalities and acid stable silicon groups in this resist development.
引用
收藏
页码：1171 / 1180
页数：8
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