Gain saturation in (In,Ga)N/GaN/(Al,Ga)N laser structures

被引：0
|
作者：
Michler, P
Lange, O
Vehse, M
Gutowski, J
Bader, S
Hahn, B
Lugauer, HJ
Härle, V
机构：
[1] Univ Bremen, Inst Festkorperphys, D-28334 Bremen, Germany
[2] Osram Opto Semicond GMBH & Co OHG, D-93049 Regensburg, Germany
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2000年 / 180卷 / 01期
关键词：
D O I：
10.1002/1521-396X(200007)180:1<391::AID-PSSA391>3.0.CO;2-N
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We performed systematic studies of the optical gain and its saturation in (In,Ga)N/GaN/(Al,Ga)N laser structures in dependence on photon energy, excitation density and number of quantum wells. The optical gain and its saturation were obtained by means of the variable stripe-length method under quasi-stationary conditions. The unsaturated gain factor increases with increasing excitation power. i.e increasing modal gain, and reaches its maximum at energies slightly below the spectral position of the gain maximum. High unsaturated gain factors of up to 40 dB at 300 K have been measured.
引用
收藏
页码：391 / 396
页数：6
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