Organic FET devices: structure-property relationship in evaporated films of three fluorenone derivatives

被引：14
作者：
Porzio, W
Destri, S
Pasini, M
Giovanella, U
Motta, T
Iosip, MD
Natali, D
Sampietro, M
Franco, L
Campione, M
机构：
[1] CNR, Ist Macromol, I-20133 Milan, Italy
[2] Inst Macromol Chem, Iasi, Romania
[3] Politecn Milan, Dipartimento Elettron & Informat, I-20133 Milan, Italy
[4] Ist Nazl Fis Nucl, I-20133 Milan, Italy
[5] Univ Milano Bicocca, Dipartimento Sci Mat, I-20126 Milan, Italy
来源：
SYNTHETIC METALS | 2004年 / 146卷 / 03期
关键词：
organic field effect transistors; fluorenone derivatives; oligomers;
D O I：
10.1016/j.synthmet.2004.08.005
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The transport properties of three fluorenone derivatives used as active layers in organic field effect transistor (OFET) have been studied. A full structural characterization, evidencing the packing features due to the fluorenone moiety, has been carried out. To rationalize the charge carrier mobility values, it is shown that in addition to structural considerations the redox behavior of molecules has to be taken into account. Structure-property relationships are identified, which might drive the future development of oligomers suitable for OFET applications. (C) 2004 Elsevier B.V. All rights reserved.
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收藏
页码：259 / 263
页数：5
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