Influence of RF power on the structure and optical properties of sputtered hafnium dioxide thin films

被引：17

作者：

Liu, Wenting ^{[1
]}

Liu, Zhengtang ^{[1
]}

Yan, Feng ^{[1
]}

Tan, Tingting ^{[1
]}

机构：

[1] NW Polytech Univ, Sch Mat Sci & Engn, Xian 710072, Shaanxi, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2010年 / 405卷 / 04期

关键词：

HfO(2) thin films; RF power; Refractive index; Band gap energy; infrared transmission; ATOMIC LAYER DEPOSITION; ELECTRICAL-PROPERTIES; HFO2; FILMS; OXIDE; EVAPORATION; DIELECTRICS; SILICON; RATIO;

D O I：

10.1016/j.physb.2009.10.059

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Hafnium dioxide (HfO(2)) thin films were prepared by radio frequency (RF) magnetron sputtering at various RF powers. The influence of RF power on the structure and optical properties of the HfO2 thin films were studied systematically by X-ray diffraction (XRD), ultraviolet-visible transmission spectrum and Fourier transform infrared (MR) spectrum. The results show that the thin films are polycrystalline, the crystallization is improved and the crystallite size has its minimum value for the thin film deposited at the RF power of 110 W. The refractive index and band gap energy of the thin films both increase firstly and then decrease with the increased RF power. The further study reveals that the antireflective effect in certain infrared waveband. such as 3-5 mu m and 8-12 mu m, can be achieved in the HfO(2)/Si/HfO(2) system, indicating an excellent infrared antireflective coating of HfO(2) thin film. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1108 / 1112

页数：5

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