Magnesium doping of In-Rich InGaN

InN and In-rich InGaN were grown by metal organic vapor phase epitaxy with magnesium doping. A set of samples were grown at 550 degrees C, whereas a second set of samples were grown at increasing temperature with Ga content. Upon annealing, p-InGaN was obtained from the second set up to an In content above 50%, with an acceptor concentration of similar to 1 x 10(19) cm(-3) and a mobility of 1-2 cm(2) V-1 s(-1). None of the samples grown at a constant temperature of 550 degrees C showed a p-behavior after heat treatment. The electrical, optical, structural and morphological characteristics of the films grown were analyzed, and the leveling off of hole concentration beyond an In content of 30% was consistent with the reported decreasing activation energy of Mg with increasing In content.