Stabilization of the β-phase Bi2O3 (201) thin film by an ultrathin Bi(001) seeding layer

被引：10
作者：
Yu, Chin-Chung [1 ]
Chang, Ho [1 ]
Sun, An-Cheng [2 ]
Chiou, Jau-Wern [1 ]
机构：
[1] Natl Univ Kaohsiung, Dept Appl Phys, 700 Kaohsiung Univ Rd, Kaohsiung 811, Taiwan
[2] Yuan Ze Univ, Dept Chem Engn & Mat Sci, Chungli 320, Taiwan
来源：
VACUUM | 2019年 / 169卷
关键词：
Bi; Bi2O3; beta-Phase Bi2O3; Bi/BiOx bilayers; Thermal deposition; ELECTRICAL-PROPERTIES; BISMUTH; TEMPERATURE; DEPOSITION; OXIDATION; NANOSTRUCTURES;
D O I：
10.1016/j.vacuum.2019.108918
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The bismuth oxide films prepared by the physical evaporation of Bi2O3 or the thermal oxidation of Bi usually display amorphous or ploycrystalline structures. There has been only few reports on the fabrication of the pure beta-phase Bi2O3 film which is accomplished under extreme conditions. In this study, an innovative method is introduced to fabricate the beta-phase Bi2O3 film with (201) preferred orientation by utilizing an ultrathin Bi(001) seeding layer. The Bi/BiOx bylayers were prepared at room temperature first and then annealed in oxygen ambient. The formation of (201) orientation of Bi2O3 film was strongly related to the oxygen pressure during annealing. Compared with the bismuth oxide obtained directly from the thermal oxidation of the bismuth film, the beta-phase Bi2O3 (201) film displayed a smooth surface and well crystallinity.
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页数：8
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