Mechanism of B removal by solvent refining of silicon in Al-Si melt with Ti addition

被引：32
作者：
Ban, Boyuan [1 ]
Li, Jingwei [1 ]
Bai, Xiaolong [1 ]
He, Qiuxiang [1 ]
Chen, Jian [1 ]
Dai, Songyuan [1 ,2 ]
机构：
[1] Chinese Acad Sci, Hefei Inst Phys Sci, Inst Appl Technol, Key Lab Novel Thin Film Solar Cells, Hefei 230031, Peoples R China
[2] North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2016年 / 672卷
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
Boron; Refining; Solidification; Al-Si-Ti-B system; METALLURGICAL-GRADE SILICON; BORON REMOVAL; MOLTEN SILICON; RICH CORNER; SOLIDIFICATION; TITANIUM; SYSTEM; PURIFICATION;
D O I：
10.1016/j.jallcom.2016.02.198
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Solvent refining of Al-Si-B alloy samples with different amounts of Ti additions are carried out, which confirms a high B removal rate with excessive Ti addition. An apparent segregation coefficient is introduced to characterize the segregation between primary Si and Al-Si melt, which are determined to be 0.0471 with 575 ppma Ti addition at the cooling rate of 50 mK.s(-1). Temperature dependence of X-Ti(l) X-in Al-Si melt(B(l))2 (in Al-Si melt), individual Ti and B contents in the Al 29.3at.%Si melt from 1323 to 1123 K are calculated. It proves that TiB2 precipitates before the primary Si formation, which causes the decrease of B contents in the Al-Si melt and contributes to the high B removal rate. Moreover, BSE/SEM observation of TiB2 and (Al,Ti,Si) phase indicates a new competitive reaction mechanism in Al-Si-Ti-B system. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：489 / 496
页数：8
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