Spectroscopic investigation of vanadium acceptor level in 4H and 6H-SiC

被引：10

作者：

Lauer, V

Brémond, G

Souifi, A

Guillot, G

Chourou, K

Madar, R

Clerjaud, B

机构：

[1] INSA, UMR CNRS 5511, Phys Mat Lab, FR-69621 Villeurbanne, France

[2] ENSPG, INPG, Mat & Genie Phys Lab, FR-38042 St Martin Dheres, France

[3] Univ Paris 06, UMR CNRS 7601, Lab Opt Solides, FR-75252 Paris, France

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

DLOS; optical absorption; vanadium;

D O I：

10.4028/www.scientific.net/MSF.338-342.635

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a study on the V4+/V3+ deep acceptor level in non intentionally vanadium doped 6H and 4H n-type SiC grown by the Lely modified method using Optical Absorption (OA) and Deep Level Optical Spectroscopy (DLOS). Comparison of DLOS and OA spectra measured on 6H and 4H substrate allows us to identify OA lines and DLOS resonance band as V3+ infernal transition between the ground state (3)A(2) to excited states. We deduce the V3+ configuration in the 6H and the 4H-SiC band gap with energetic positions. Some of the DLOS spectra thresholds are interpreted as transition from the V3+ ground level to the successive conduction band minima.

引用

页码：635 / 638

页数：4

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