Wide-bandgap semiconductor ultraviolet photodetectors

被引：1208
作者：
Monroy, E
Omnès, F
Calle, F
机构：
[1] CEA, SP2M, Dept Rech Fondamentale Mat condensee, F-38054 Grenoble, France
[2] CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France
[3] Univ Politecn Madrid, ISOM, Madrid 28040, Spain
[4] Univ Politecn Madrid, Dpto Ingn Elect, Madrid 28040, Spain
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 04期
关键词：
D O I：
10.1088/0268-1242/18/4/201
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Industries such as the automotive, aerospace or military, as well as environmental and biological research have promoted the development of ultraviolet (UV) photodetectors capable of operating at high temperatures and in hostile environments. UV-enhanced Si photodiodes are hence giving way to a new generation of UV detectors fabricated from wide-bandgap semiconductors, such as SiC, diamond, Ill-nitrides, ZnS, ZnO, or ZnSe. This paper provides a general review of latest progresses in wide-bandgap semiconductor photodetectors.
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页码：R33 / R51
页数：19
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