Synthesis of Graphene by Low Pressure Chemical Vapor Deposition (LPCVD) Method

被引:1
作者
Khan, Sunny [1 ]
Ali, Javid [1 ]
Harsh [2 ]
Husain, M. [1 ,3 ]
Zulfequar, M. [1 ]
机构
[1] Jamia Millia Islamia, Dept Phys, New Delhi, India
[2] Jamia Millia Islamia, Ctr Nanosci & Nanotechnol, New Delhi, India
[3] MJP Rohilkhand Univ, Bareilly, Uttar Pradesh, India
来源
RECENT TRENDS IN MATERIALS AND DEVICES, ICRTMD 2015 | 2017年 / 178卷
关键词
FEW-LAYER GRAPHENE; FILMS; AREA;
D O I
10.1007/978-3-319-29096-6_15
中图分类号
O59 [应用物理学];
学科分类号
摘要
Graphene, the wonder material, is a one atom thick two dimensional crystal lattice having a honeycomb like structure. Its peculiar electrical, mechanical and optical properties have attracted the attention of the researchers like never before. Graphene film with two dimensional structure were successfully prepared via a physical method on Ni coated Si wafer using low pressure chemical vapor (LPCVD) method at temperature as low as 650 degrees C. For this growth acetylene was used as source gas and the hydrogen as the carrier gas in ratio of 1:20. The as-grown graphene was characterized using Scanning Electron Microscopy, Fourier transformation infra-red (FTIR) and Raman Spectroscopy. The SEM, FTIR and Raman spectroscopy confirmed the successful growth of multilayer
引用
收藏
页码:119 / 123
页数:5
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