Tensile-strained GaAsN quantum dots on InP

被引：7
|
作者：
Pohjola, P.
Hakkarainen, T.
Koskenvaara, H.
Sopanen, M.
Lipsanen, H.
Sainio, J.
机构：
[1] Helsinki Univ Technol, Micro Nanosci Lab, FIN-02015 Espoo, Finland
[2] Helsinki Univ Technol, Phys Lab, FIN-02015 Espoo, Finland
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 17期
关键词：
D O I：
10.1063/1.2719662
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Self-assembled quantum dots are typically fabricated from compressive-strained material systems, e.g., InAs on GaAs. In this letter, self-assembled quantum dots from tensile-strained GaAsN on InP are demonstrated. GaAsN on InP has type-I band alignment. Stranski-Krastanov growth mode is not observed, but in situ annealing of the uncapped samples results in the formation of islands. Photoluminescence spectra from the buried GaAsN show separate peaks due to a wetting layer and islands around the energies of 1.3 and 1.1 eV, respectively. (c) 2007 American Institute of Physics.
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页数：3
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