Ferroelectric properties of BaTiO3 thin films co-doped with Mn and Nb

被引:9
作者
Phuyal, Dibya [1 ]
Mukherjee, Soham [1 ]
Jana, Somnath [1 ,3 ]
Denoel, Fernand [1 ]
Kamalakar, M. Venkata [1 ]
Butorin, Sergei M. [1 ]
Kalaboukhov, Alexei [2 ]
Rensmo, Hakan [1 ]
Karis, Olof [1 ]
机构
[1] Uppsala Univ, Dept Phys & Astron, Div Mol & Condensed Matter Phys, Box 516, SE-75121 Uppsala, Sweden
[2] Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
[3] Helmholtz Zentrum Berlin, Methods & Instrumentat Synchrotron Radiat, D-12489 Berlin, Germany
基金
瑞典研究理事会;
关键词
MULTIFERROICS; POLARIZATION; PHYSICS;
D O I
10.1063/1.5118869
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report on properties of BaTiO3 thin films where the bandgap is tuned via aliovalent doping of Mn and Nb ions co-doped at the Ti site. The doped films show single-phase tetragonal structure, growing epitaxially with a smooth interface to the substrate. Using piezoforce microscopy, we find that both doped and undoped films exhibit good ferroelectric response. The piezoelectric domain switching in the films was confirmed by measuring local hysteresis of the polarization at several different areas across the thin films, demonstrating a switchable ferroelectric state. The doping of the BaTiO3 also reduces the bandgap of the material from 3.2 eV for BaTiO3 to nearly 2.7 eV for the 7.5% doped sample, suggesting the viability of the films for effective light harvesting in the visible spectrum. The results demonstrate co-doping as an effective strategy for bandgap engineering and a guide for the realization of visible-light applications using its ferroelectric properties.
引用
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页数:6
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