Codoping characteristics of Zn with Mg in GaN

被引：26

作者：

Kim, KS

Han, MS

Yang, GM ^{[1
]}

Youn, CJ

Lee, HJ

Cho, HK

Lee, JY

机构：

[1] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Chonju 561756, South Korea

[2] Chonbuk Natl Univ, Semicond Phys Res Ctr, Chonju 561756, South Korea

[3] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 08期

关键词：

D O I：

10.1063/1.1289494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The doping characteristics of Mg-Zn codoped GaN films grown by metalorganic chemical vapor deposition are investigated. By means of the concept of Mg-Zn codoping technique, we have grown p-GaN showing a low electrical resistivity (0.72 Omega cm) and a high hole concentration (8.5x10(17) cm(-3)) without structural degradation of the film. It is thought that the codoping of Zn atoms with Mg raises the Mg activation ratio by reducing the hydrogen solubility in p-GaN. In addition, the measured specific contact resistance of Mg-Zn codoped GaN film is 5.0x10(-4) Omega cm(2), which is one order of magnitude lower than that of Mg doped only GaN film (1.9x10(-3) Omega cm(2)). (C) 2000 American Institute of Physics. [S0003-6951(00)02234-8].

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页码：1123 / 1125

页数：3

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