Codoping characteristics of Zn with Mg in GaN

被引：27
作者：
Kim, KS
Han, MS
Yang, GM [1 ]
Youn, CJ
Lee, HJ
Cho, HK
Lee, JY
机构：
[1] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Chonju 561756, South Korea
[2] Chonbuk Natl Univ, Semicond Phys Res Ctr, Chonju 561756, South Korea
[3] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 08期
关键词：
D O I：
10.1063/1.1289494
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The doping characteristics of Mg-Zn codoped GaN films grown by metalorganic chemical vapor deposition are investigated. By means of the concept of Mg-Zn codoping technique, we have grown p-GaN showing a low electrical resistivity (0.72 Omega cm) and a high hole concentration (8.5x10(17) cm(-3)) without structural degradation of the film. It is thought that the codoping of Zn atoms with Mg raises the Mg activation ratio by reducing the hydrogen solubility in p-GaN. In addition, the measured specific contact resistance of Mg-Zn codoped GaN film is 5.0x10(-4) Omega cm(2), which is one order of magnitude lower than that of Mg doped only GaN film (1.9x10(-3) Omega cm(2)). (C) 2000 American Institute of Physics. [S0003-6951(00)02234-8].
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页码：1123 / 1125
页数：3
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